Tantalum sputtering target - Planar target

Tantalum target

Tantalum has a melting point of 2996℃, a boiling point of 5458℃ and a density of 16.6g /cm. Tantalum is widely used in electronics, semiconductor, chemical industry, machinery, aerospace, medical treatment,  military industry and other industries due to its high temperature resistance, corrosion resistance,  good cold processing and welding performance. With the continuous progress and innovation of science and technology,  tantalum will be more and more widely used in various fields.

Tantalum targets are mainly used in semiconductor, optical coating and other fields,  our company can produce various specifications of semiconductor and optical tantalum and its alloy targets according to  the different needs of customers. Ensure that the chemical composition of tantalum target material tantalum content is  greater than 99.95%, 99.99%; Grain size less than 100um;  Flatness less than 0.2mm; The surface roughness is less than Ra 1.6μm to ensure a high quality level of tantalum target.

Tantalum ingots smelted by vacuum electron beam melting furnace in our factory can be further processed into products  required by customers through our subsequent forging press, milling machine, surface treatment equipment,  vacuum annealing furnace, rolling mill, cutting machine, sawing machine, grinding machine,  wire drawing machine and other processing equipment, including target material, sheet material, sheet material,  strip material, bar material, silk material,  pipe material and so on. According to customer's custom requirements and drawings for processing,  welcome customers to inquire and customize!

Purity: 99.95% (3N5) -99.99% (4N)

Brand name: RO5200

Specification: square target, round target, rotating target

Implementation standard: ASTM B708

Recrystallization rate: At least 95%

Grain size: conventional grain size ≤ 100um, can be customized grain size according to customer requirements

Flatness ≤0.2mm

Surface roughness lt; ≤ 1.6 mu 

Composition content:

Metal impurities, ppm

element        Al        Ag        Au        B        Bi        Ca        Cd        Cl        Co        Cr        Cu        Fe

The content of 0.2 1.0 1.0 0.1 1.0 0.1 1.0 1.0 0.05 0.25 0.75 0.4

element        Ga        Ge        Hf        K        Li        Mg        Mn        Mo        Na        Nb        Ni        P

The content of 1.0 1.0 1.0 0.05 0.1 0.1 0.1 5.0 0.1 0.25 1.0 75

element        Pb        S        Si        Sn        Th        Ti        V        W        Zn        Zr        Y        U

The content of 1.0 0.2 0.2 0.1 0.0 1.0 0.2 70.0 1.0 0.2 1.0 0.005