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High Purity 99.99% Hafnium Plate Round Sputtering Target Hafnium Target
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Products Descr1ption
High Purity 99.99% Hafnium Plate Round Sputtering Target Hafnium Target
Character:
Melting point:2227℃ Boiling point:4602°C Density: 13.31 g/cm3 Electronegativity:1.3 Paulings Electrical Resistivity:35.1 microhm-cm @ 25°C Poisson's Ratio:0.37
Application:
Optical, semiconductor, electronic, aerospace, electronics, nuclear, optics, medicine,and other coating fields.
Grade:
Hf+Zr≥99.99%, Zr≤0.2%/0.3%/0.5%